N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK Vishay SIHD6N80AE-GE3
- RS Stock No.:
- 200-6867
- Mfr. Part No.:
- SIHD6N80AE-GE3
- Brand:
- Vishay
Available to back order for despatch 23/01/2025
Price Each (In a Pack of 25)
£0.665
(exc. VAT)
£0.798
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | £0.665 | £16.625 |
| 50 - 100 | £0.532 | £13.30 |
| 125 - 225 | £0.466 | £11.65 |
| 250 - 600 | £0.41 | £10.25 |
| 625 + | £0.40 | £10.00 |
*price indicative
- RS Stock No.:
- 200-6867
- Mfr. Part No.:
- SIHD6N80AE-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
Product Details
The Vishay SIHD6N80AE-GE3 is a E series power MOSFET.
Low figure-of-merit
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A, 5 A |
| Maximum Drain Source Voltage | 850 V |
| Package Type | DPAK (TO-252) |
| Series | E |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.95 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Number of Elements per Chip | 1 |
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