Vishay E N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK SIHD6N80AE-GE3

Bulk discount available

Subtotal (1 pack of 25 units)*

£16.80

(exc. VAT)

£20.15

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 30 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 25£0.672£16.80
50 - 100£0.538£13.45
125 - 225£0.47£11.75
250 - 600£0.421£10.53
625 +£0.41£10.25

*price indicative

RS Stock No.:
200-6867
Mfr. Part No.:
SIHD6N80AE-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.2 A, 5 A

Maximum Drain Source Voltage

850 V

Package Type

DPAK (TO-252)

Series

E

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.95 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Vishay SIHD6N80AE-GE3 is a E series power MOSFET.

Low figure-of-merit
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection

Related links