Infineon IMW1 N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin TO-247 IMW120R350M1HXKSA1

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Subtotal (1 pack of 2 units)*

£7.14

(exc. VAT)

£8.56

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18£3.57£7.14
20 - 48£3.215£6.43
50 - 98£3.00£6.00
100 - 198£2.82£5.64
200 +£2.605£5.21

*price indicative

Packaging Options:
RS Stock No.:
222-4861
Mfr. Part No.:
IMW120R350M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

1200 V

Series

IMW1

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses

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