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Infineon IMW1 Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247 IMW120R060M1HXKSA1

RS Stock No.:: 222-4856
Mfr. Part No.:: IMW120R060M1HXKSA1
Brand:: Infineon

Infineon IMW1 Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247 IMW120R060M1HXKSA1

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Subtotal (1 unit)*

£6.56

(exc. VAT)

£7.87

(inc. VAT)

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In Stock

Plus 46 unit(s) shipping from 29 December 2025

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Units	Per unit
1 - 4	£6.56
5 - 9	£6.23
10 - 24	£5.97
25 - 49	£5.71
50 +	£5.31

*price indicative

RS Stock No.:: 222-4856
Mfr. Part No.:: IMW120R060M1HXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Series	IMW1
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Series IMW1
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMW120R060M1HXKSA1

The Infineon CoolSiC™ 1200 V, 60 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

Temperature independent turn-off switching losses