Infineon IMW1 N-Channel MOSFET, 36 A, 1200 V, 3-Pin TO-247 IMW120R060M1HXKSA1
- RS Stock No.:
- 222-4856
- Mfr. Part No.:
- IMW120R060M1HXKSA1
- Brand:
- Infineon
Save 19% when you buy 50 units
Subtotal (1 unit)*
£6.56
(exc. VAT)
£7.87
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 61 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £6.56 |
| 5 - 9 | £6.23 |
| 10 - 24 | £5.97 |
| 25 - 49 | £5.71 |
| 50 + | £5.31 |
*price indicative
- RS Stock No.:
- 222-4856
- Mfr. Part No.:
- IMW120R060M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 36 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247 | |
| Series | IMW1 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Series IMW1 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon CoolSiC™ 1200 V, 60 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Related links
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R060M1HXKSA1
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R045M1XKSA1
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R220M1HXKSA1
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R350M1HXKSA1
- Infineon IMW1 N-Channel MOSFET 1700 V, 3-Pin TO-247 IMW120R045M1XKSA1
- Infineon CoolSiC SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R060M1HXKSA1
- STMicroelectronics SCTW40N MOSFET 1200 V, 3-Pin HiP247 SCTW40N120G2V
- Infineon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R060CFD7XKSA1