Infineon IMW1 Type N-Channel MOSFET, 52 A, 1700 V Enhancement, 3-Pin TO-247 IMW120R045M1XKSA1
- RS Stock No.:
- 222-4853
- Mfr. Part No.:
- IMW120R045M1XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£8.31
(exc. VAT)
£9.97
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 265 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £8.31 |
| 5 - 9 | £7.89 |
| 10 - 24 | £7.73 |
| 25 - 49 | £7.24 |
| 50 + | £6.73 |
*price indicative
- RS Stock No.:
- 222-4853
- Mfr. Part No.:
- IMW120R045M1XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Series | IMW1 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Series IMW1 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Related links
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R045M1XKSA1
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R350M1HXKSA1
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R220M1HXKSA1
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R060M1HXKSA1
- Infineon CoolSiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R045M1XKSA1
- Infineon CoolSiC SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R035M1HXKSA1
- Infineon IMZ1 N-Channel MOSFET 1200 V, 4-Pin TO-247-4 IMZ120R045M1XKSA1
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin TO-247 STW56N60M2