Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK Infineon IPD60N10S4L12ATMA1
- RS Stock No.:
- 222-4669
- Mfr. Part No.:
- IPD60N10S4L12ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)**
£8.59
(exc. VAT)
£10.31
(inc. VAT)
60 In stock - FREE next working day delivery available*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Pack** |
---|---|---|
10 - 40 | £0.859 | £8.59 |
50 - 90 | £0.816 | £8.16 |
100 - 240 | £0.782 | £7.82 |
250 - 490 | £0.748 | £7.48 |
500 + | £0.696 | £6.96 |
**price indicative
- RS Stock No.:
- 222-4669
- Mfr. Part No.:
- IPD60N10S4L12ATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 60 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-252 | |
Series | OptiMOS™ | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.012 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.1V | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-252 | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.012 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
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