Planned Maintenance – Friday 21st to Sunday 23rd June 2024

To improve your experience with RS, we are making some system upgrades, which means from Friday 21^st at 8pm to Sunday 23^rd at 10pm we are unable to process orders. We will be fully functional again on Monday 24^th June. We apologise for any inconvenience and thank you for your patience during this period.

Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK Infineon IPD60N10S4L12ATMA1

RS Stock No.:: 222-4669
Mfr. Part No.:: IPD60N10S4L12ATMA1
Brand:: Infineon

Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK Infineon IPD60N10S4L12ATMA1

80 In stock - FREE next working day delivery available

20 available from Europe for delivery within 1 working day(s).

Price Each (In a Pack of 10)

£1.18

(exc. VAT)

£1.42

(inc. VAT)

Units	Per unit	Per Pack*
10 - 40	£1.18	£11.80
50 - 90	£1.121	£11.21
100 - 240	£1.074	£10.74
250 - 490	£1.027	£10.27
500 +	£0.956	£9.56

*price indicative

RS Stock No.:: 222-4669
Mfr. Part No.:: IPD60N10S4L12ATMA1
Brand:: Infineon

Technical Reference

Datasheet - IPD60N10S4L12ATMA1

Legislation and Compliance

Product Details

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	100 V
Package Type	TO-252
Series	OptiMOS™
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	0.012 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.1V
Transistor Material	Silicon
Number of Elements per Chip	1