Infineon OptiMOS™ Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1
- RS Stock No.:
- 222-4669
- Mfr. Part No.:
- IPD60N10S4L12ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£8.63
(exc. VAT)
£10.36
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20 unit(s) ready to ship
- Plus 11,360 unit(s) shipping from 09 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.863 | £8.63 |
| 50 - 90 | £0.82 | £8.20 |
| 100 - 240 | £0.785 | £7.85 |
| 250 - 490 | £0.752 | £7.52 |
| 500 + | £0.699 | £6.99 |
*price indicative
- RS Stock No.:
- 222-4669
- Mfr. Part No.:
- IPD60N10S4L12ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-252 | |
| Series | OptiMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.012 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-252 | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.012 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Related links
- Infineon OptiMOS™ Silicon N-Channel MOSFET 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 60 V, 3-Pin DPAK SQD50034EL_GE3
- Toshiba N-Channel MOSFET 60 V, 3-Pin DPAK TK60S06K3L
- STMicroelectronics STripFET II N-Channel MOSFET 60 V, 3-Pin DPAK STD60NF06T4
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905ZTRPBF
- onsemi N-Channel MOSFET 60 V, 3-Pin DPAK NTD3055L104T4G
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 3-Pin DPAK IPD053N06NATMA1
- ROHM AG091FLD3HRB N-Channel MOSFET 60 V, 3-Pin DPAK AG091FLD3HRBTL