Infineon CoolMOS™ G7 Dual N-Channel MOSFET Transistor & Diode, 45 A, 650 V, 10-Pin DDPAK IPDD60R150G7XTMA1
- RS Stock No.:
- 220-7419
- Mfr. Part No.:
- IPDD60R150G7XTMA1
- Brand:
- Infineon
Subtotal (1 reel of 1700 units)*
£2,074.00
(exc. VAT)
£2,482.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,500 unit(s) shipping from 05 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1700 + | £1.22 | £2,074.00 |
*price indicative
- RS Stock No.:
- 220-7419
- Mfr. Part No.:
- IPDD60R150G7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | DDPAK | |
| Series | CoolMOS™ G7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance | 0.15 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type DDPAK | ||
Series CoolMOS™ G7 | ||
Mounting Type Surface Mount | ||
Pin Count 10 | ||
Maximum Drain Source Resistance 0.15 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 2 | ||
The Infineon Technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg
Innovative top-side cooling concept
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Innovative top-side cooling concept
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Related links
- Infineon CoolMOS™ G7 Dual N-Channel MOSFET Transistor & Diode 650 V, 10-Pin DDPAK IPDD60R150G7XTMA1
- Infineon CoolMOS™ G7 Dual N-Channel MOSFET Transistor & Diode 650 V, 10-Pin DDPAK IPDD60R080G7XTMA1
- Infineon CoolMOS™ P7 Dual N-Channel MOSFET Transistor & Diode 650 V, 4-Pin TO-247-4 IPZA60R060P7XKSA1
- Infineon CoolMOS™ P6 Dual N-Channel MOSFET Transistor & Diode 650 V, 3-Pin TO-247 IPW60R099P6XKSA1
- Infineon CoolMOS™ Dual N-Channel MOSFET Transistor & Diode 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1
- Infineon CoolMOS™ Dual N-Channel MOSFET Transistor & Diode 650 V, 3-Pin TO-247 IPW60R090CFD7XKSA1
- Infineon CoolMOS™ Dual N-Channel MOSFET Transistor & Diode 650 V, 3-Pin IPAK IPS60R1K0CEAKMA1
- Infineon CoolMOS™ G7 N-Channel MOSFET 600 V, 10-Pin DDPAK IPDD60R190G7XTMA1