Infineon CoolMOS™ C7 N-Channel MOSFET, 23 A, 650 V, 8-Pin HSOF-8 IPT60R150G7XTMA1
- RS Stock No.:
- 219-6013
- Mfr. Part No.:
- IPT60R150G7XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£14.60
(exc. VAT)
£17.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,980 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.92 | £14.60 |
| 25 - 45 | £2.598 | £12.99 |
| 50 - 120 | £2.424 | £12.12 |
| 125 - 245 | £2.248 | £11.24 |
| 250 + | £2.074 | £10.37 |
*price indicative
- RS Stock No.:
- 219-6013
- Mfr. Part No.:
- IPT60R150G7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 23 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | HSOF-8 | |
| Series | CoolMOS™ C7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.15 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type HSOF-8 | ||
Series CoolMOS™ C7 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.15 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
Enables best-in-class R DS(on) in smallest footprint
Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (∼1nH)
Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
Enables improved thermal performance R th
Higher efficiency due to the improved C7 Gold technology and faster switching
Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements
Enables best-in-class R DS(on) in smallest footprint
Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (∼1nH)
Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
Enables improved thermal performance R th
Higher efficiency due to the improved C7 Gold technology and faster switching
Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements
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