Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 3-Pin TO-263 IPB60R060P7ATMA1

RS Stock No.:: 220-7389
Mfr. Part No.:: IPB60R060P7ATMA1
Brand:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 3-Pin TO-263 IPB60R060P7ATMA1

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Subtotal (1 pack of 2 units)*

£8.68

(exc. VAT)

£10.42

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 78 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
2 - 18	£4.34	£8.68
20 - 48	£3.815	£7.63
50 - 98	£3.605	£7.21
100 - 198	£3.34	£6.68
200 +	£3.08	£6.16

*price indicative

RS Stock No.:: 220-7389
Mfr. Part No.:: IPB60R060P7ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	151A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 151A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB60R060P7ATMA1

The Infineon 600V Cool MOS P7 super junction MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use in manufacturing environments by stopping ESD failures occurring

Integrated RG reduces MOSFET oscillation sensitivity

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers