Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 5-Pin VSON IPL60R065P7AUMA1

RS Stock No.:: 220-7429
Mfr. Part No.:: IPL60R065P7AUMA1
Brand:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 5-Pin VSON IPL60R065P7AUMA1

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Subtotal (1 pack of 2 units)*

£8.40

(exc. VAT)

£10.08

(inc. VAT)

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In Stock

150 unit(s) ready to ship

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Units	Per unit	Per Pack*
2 - 8	£4.20	£8.40
10 - 18	£3.61	£7.22
20 - 48	£3.36	£6.72
50 - 98	£3.15	£6.30
100 +	£2.90	£5.80

*price indicative

RS Stock No.:: 220-7429
Mfr. Part No.:: IPL60R065P7AUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	151A
	Maximum Drain Source Voltage Vds	650V
	Package Type	VSON
	Series	CoolMOS P7
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	201W
	Typical Gate Charge Qg @ Vgs	67nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	8.1mm
	Standards/Approvals	No
	Width	8.1 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 151A
	Maximum Drain Source Voltage Vds 650V
	Package Type VSON
	Series CoolMOS P7
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 201W
	Typical Gate Charge Qg @ Vgs 67nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 8.1mm
	Standards/Approvals No
	Width 8.1 mm
	Automotive Standard No

Datasheet - IPL60R065P7AUMA1

The Infineon 600V Cool MOS P7 super junction (SJ) MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use in manufacturing environments by stopping ESD failures occurring

Integrated RG reduces MOSFET oscillation sensitivity

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers