Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 57.2 A, 650 V Enhancement TO-263

RS Stock No.:: 220-7392
Mfr. Part No.:: IPB65R190CFDAATMA1
Brand:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 57.2 A, 650 V Enhancement TO-263

Subtotal (1 reel of 1000 units)*

£1,193.00

(exc. VAT)

£1,432.00

(inc. VAT)

FREE delivery for orders over £50.00

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Shipping from 04 May 2026

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Units	Per unit	Per Reel*
1000 +	£1.193	£1,193.00

*price indicative

RS Stock No.:: 220-7392
Mfr. Part No.:: IPB65R190CFDAATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	57.2A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS P7
	Package Type	TO-263
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 57.2A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS P7
	Package Type TO-263
	Mount Type Surface
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB65R190CFDAATMA1

The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.

First 650V automotive qualified technology with integrated fast body diode on the market

Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt

Low gate charge value Q g

Low Q rr at repetitive commutation on body diode & low Q oss

Reduced turn on and turn of delay times

Increased safety margin due to higher breakdown voltage

Reduced EMI appearance and easy to design in

Better light load efficiency

Lower switching losses

Higher switching frequency and/or higher duty cycle possible

High quality and reliability