Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode, 57.2 A, 650 V, 3-Pin D2PAK IPB65R190CFDAATMA1

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Subtotal (1 pack of 2 units)*

£5.78

(exc. VAT)

£6.94

(inc. VAT)

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2 - 8£2.89£5.78
10 - 18£2.60£5.20
20 - 48£2.43£4.86
50 - 98£2.255£4.51
100 +£2.105£4.21

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Packaging Options:
RS Stock No.:
220-7393
Mfr. Part No.:
IPB65R190CFDAATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57.2 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

CoolMOS™ P7

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.19 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.

First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & low Q oss
Reduced turn on and turn of delay times
Increased safety margin due to higher breakdown voltage
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
Higher switching frequency and/or higher duty cycle possible
High quality and reliability

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