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Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1

RS Stock No.:: 219-6023
Mfr. Part No.:: IPW60R045P7XKSA1
Brand:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1

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£5.60

(exc. VAT)

£6.72

(inc. VAT)

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In Stock

Plus 357 unit(s) shipping from 29 December 2025

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Units	Per unit
1 - 9	£5.60
10 - 24	£5.09
25 - 49	£4.76
50 - 99	£4.43
100 +	£4.09

*price indicative

RS Stock No.:: 219-6023
Mfr. Part No.:: IPW60R045P7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	206A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS P7
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	45mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	90nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	201W
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Width	21.1 mm
	Height	5.21mm
	Length	16.13mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 206A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS P7
	Package Type TO-247
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 45mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 90nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 201W
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Width 21.1 mm
	Height 5.21mm
	Length 16.13mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPW60R045P7XKSA1

The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available