Infineon CoolMOS™ P7 Dual N-Channel MOSFET, 386 A, 650 V, 3-Pin TO-247 IPW60R024P7XKSA1

Bulk discount available

Subtotal (1 unit)*

£8.88

(exc. VAT)

£10.66

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 332 unit(s) ready to ship
  • Plus 999,999,667 unit(s) shipping from 09 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4£8.88
5 - 9£8.17
10 - 24£7.64
25 - 49£7.10
50 +£6.57

*price indicative

Packaging Options:
RS Stock No.:
219-6019
Mfr. Part No.:
IPW60R024P7XKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

386 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolMOS™ P7

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

The Infineon 600V CoolMOS P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications

Related links