Infineon CoolMOS P7 Type N-Channel MOSFET, 386 A, 650 V Enhancement, 3-Pin TO-247 IPW60R024P7XKSA1

RS Stock No.:: 219-6019
Mfr. Part No.:: IPW60R024P7XKSA1
Brand:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 386 A, 650 V Enhancement, 3-Pin TO-247 IPW60R024P7XKSA1

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Units	Per unit
1 - 4	£8.88
5 - 9	£8.17
10 - 24	£7.64
25 - 49	£7.10
50 +	£6.57

*price indicative

RS Stock No.:: 219-6019
Mfr. Part No.:: IPW60R024P7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	386A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS P7
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	291W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	164nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Height	5.21mm
	Standards/Approvals	No
	Width	21.1 mm
	Length	16.13mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 386A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS P7
	Package Type TO-247
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 291W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 164nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Height 5.21mm
	Standards/Approvals No
	Width 21.1 mm
	Length 16.13mm
	Automotive Standard No

Datasheet - IPW60R024P7XKSA1

The Infineon 600V CoolMOS P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Integrated RG reduces MOSFET oscillation sensitivity

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers

Parts available suitable for consumer and industrial applications