Infineon CoolMOS™ P7 Dual N-Channel MOSFET, 386 A, 650 V, 3-Pin TO-247 IPW60R024P7XKSA1
- RS Stock No.:
- 219-6018
- Mfr. Part No.:
- IPW60R024P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£239.40
(exc. VAT)
£287.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 330 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £7.98 | £239.40 |
| 60 - 60 | £7.581 | £227.43 |
| 90 + | £7.102 | £213.06 |
*price indicative
- RS Stock No.:
- 219-6018
- Mfr. Part No.:
- IPW60R024P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 386 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.024 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 386 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series CoolMOS™ P7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.024 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 2 | ||
The Infineon 600V CoolMOS P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
Related links
- Infineon CoolMOS™ P7 Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R024P7XKSA1
- Infineon CoolMOS™ P7 Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R045P7XKSA1
- Infineon CoolMOS™ P7 Dual N-Channel MOSFET Transistor & Diode 650 V, 4-Pin TO-247-4 IPZA60R060P7XKSA1
- Infineon CoolMOS™ CFD7 Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPA60R280CFD7XKSA1
- Infineon CoolMOS CSFD Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R037CSFDXKSA1
- Infineon CoolMOS CSFD Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R024CFD7XKSA1
- Infineon CoolMOS™ G7 Dual N-Channel MOSFET Transistor & Diode 650 V, 10-Pin DDPAK IPDD60R080G7XTMA1
- Infineon CoolMOS™ G7 Dual N-Channel MOSFET Transistor & Diode 650 V, 10-Pin DDPAK IPDD60R150G7XTMA1