Infineon CoolMOS™ P7 N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 FP IPA60R600P7XKSA1
- RS Stock No.:
- 219-5982
- Mfr. Part No.:
- IPA60R600P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£20.30
(exc. VAT)
£24.35
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 100 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.406 | £20.30 |
| 100 - 200 | £0.395 | £19.75 |
| 250 - 450 | £0.385 | £19.25 |
| 500 - 950 | £0.375 | £18.75 |
| 1000 + | £0.366 | £18.30 |
*price indicative
- RS Stock No.:
- 219-5982
- Mfr. Part No.:
- IPA60R600P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ P7 | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.6 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ P7 | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.6 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMO P7 optimized superjunction MOSFETs merging high energy efficiency with ease-of-use is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS 7th generation platform ensure its high efficiency.
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
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