Infineon CoolMOS™ P7 N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-247 IPW60R180P7XKSA1
- RS Stock No.:
- 218-3087
- Mfr. Part No.:
- IPW60R180P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£12.25
(exc. VAT)
£14.70
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 240 unit(s) shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.45 | £12.25 |
| 25 - 45 | £2.156 | £10.78 |
| 50 - 120 | £2.01 | £10.05 |
| 125 - 245 | £1.886 | £9.43 |
| 250 + | £1.74 | £8.70 |
*price indicative
- RS Stock No.:
- 218-3087
- Mfr. Part No.:
- IPW60R180P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ P7 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.18 Ω | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ P7 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.18 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ series N-channel power MOSFET. The 600V CoolMOS™ P7 super junction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products
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