Infineon CoolMOS™ P7 N-Channel MOSFET, 12 A, 600 V, 3-Pin TO-220 FP IPA60R280P7SXKSA1
- RS Stock No.:
- 218-3005
- Mfr. Part No.:
- IPA60R280P7SXKSA1
- Brand:
- Infineon
Subtotal (1 pack of 15 units)*
£5.235
(exc. VAT)
£6.285
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,990 unit(s) shipping from 26 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 + | £0.349 | £5.24 |
*price indicative
- RS Stock No.:
- 218-3005
- Mfr. Part No.:
- IPA60R280P7SXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.28 Ω | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ P7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.28 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ P7 series N-Channel Power MOSFET. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness > 2kV (HBM) for all products
Significant reduction of switching and conduction losses
Excellent ESD robustness > 2kV (HBM) for all products
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