Infineon CoolMOS™ P7 N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP IPAW60R360P7SXKSA1

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£4.44

(exc. VAT)

£5.325

(inc. VAT)

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Packaging Options:
RS Stock No.:
218-3017
Mfr. Part No.:
IPAW60R360P7SXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P7

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.36 Ω

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products

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