Infineon CoolMOS™ P7 N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP IPAW60R360P7SXKSA1
- RS Stock No.:
- 218-3017
- Mfr. Part No.:
- IPAW60R360P7SXKSA1
- Brand:
- Infineon
Subtotal (1 pack of 15 units)*
£4.44
(exc. VAT)
£5.325
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 405 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 + | £0.296 | £4.44 |
*price indicative
- RS Stock No.:
- 218-3017
- Mfr. Part No.:
- IPAW60R360P7SXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.36 Ω | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ P7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.36 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products
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