Infineon CoolMOS™ P7 N-Channel MOSFET, 12 A, 600 V, 3-Pin TO-220 FP IPAW60R280P7SXKSA1
- RS Stock No.:
- 214-4361
- Mfr. Part No.:
- IPAW60R280P7SXKSA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 214-4361
- Mfr. Part No.:
- IPAW60R280P7SXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 600 V | |
Series | CoolMOS™ P7 | |
Package Type | TO-220 FP | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.28 Ω | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ P7 | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.28 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Integrated RG reduces MOSFET oscillation sensitivity
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