Infineon CoolMOS™ P7 N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP IPAW60R360P7SXKSA1

Save 9% when you buy 1125 units

Subtotal (1 tube of 45 units)*

£16.65

(exc. VAT)

£19.80

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 405 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
45 - 45£0.37£16.65
90 - 180£0.36£16.20
225 - 405£0.351£15.80
450 - 1080£0.342£15.39
1125 +£0.333£14.99

*price indicative

RS Stock No.:
218-3016
Mfr. Part No.:
IPAW60R360P7SXKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Series

CoolMOS™ P7

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.36 Ω

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products

Related links