Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 IPB60R280P7ATMA1
- RS Stock No.:
- 214-4370
- Mfr. Part No.:
- IPB60R280P7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£14.20
(exc. VAT)
£17.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 290 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.42 | £14.20 |
| 50 - 90 | £1.349 | £13.49 |
| 100 - 240 | £1.292 | £12.92 |
| 250 - 490 | £1.235 | £12.35 |
| 500 + | £1.15 | £11.50 |
*price indicative
- RS Stock No.:
- 214-4370
- Mfr. Part No.:
- IPB60R280P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.27 mm | |
| Height | 4.5mm | |
| Standards/Approvals | No | |
| Length | 10.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series 600V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 9.27 mm | ||
Height 4.5mm | ||
Standards/Approvals No | ||
Length 10.02mm | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Related links
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R280P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R280P7SAUMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R280P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R280P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R280P7SXKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPAW60R280P7SXKSA1
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V, 3-Pin D2PAK STB18N60DM2
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R120P7ATMA1