Infineon OptiMOS Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-220 IPP80N06S209AKSA2
- RS Stock No.:
- 218-3071
- Mfr. Part No.:
- IPP80N06S209AKSA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£21.49
(exc. VAT)
£25.79
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 04 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | £2.149 | £21.49 |
| 20 - 40 | £2.041 | £20.41 |
| 50 - 90 | £1.955 | £19.55 |
| 100 - 240 | £1.87 | £18.70 |
| 250 + | £1.741 | £17.41 |
*price indicative
- RS Stock No.:
- 218-3071
- Mfr. Part No.:
- IPP80N06S209AKSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon 55 V N-Channel automotive MOSFET. This MOSFET is used in valves control, solenoids control, lighting, single-ended motors etc.
N-channel - Enhancement mode
175°C operating temperature
100% Avalanche tested
Related links
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S209AKSA2
- Infineon N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S207AKSA4
- Infineon N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S2L07AKSA2
- STMicroelectronics STripFET II N-Channel MOSFET 55 V, 3-Pin TO-220 STP80NF55-06
- STMicroelectronics STripFET II N-Channel MOSFET 55 V, 3-Pin TO-220 STP80NF55-08
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin D2PAK IPB80N06S2L09ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin D2PAK IPB80N06S208ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin I2PAK IPI80N06S207AKSA1