Infineon 600V CoolMOS P6 Type N-Channel MOSFET, 23.8 A, 600 V N, 3-Pin TO-220 IPA60R160P6XKSA1
- RS Stock No.:
- 218-2999
- Mfr. Part No.:
- IPA60R160P6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£13.10
(exc. VAT)
£15.70
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 03 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.62 | £13.10 |
| 25 - 45 | £2.202 | £11.01 |
| 50 - 120 | £2.07 | £10.35 |
| 125 - 245 | £1.912 | £9.56 |
| 250 + | £1.782 | £8.91 |
*price indicative
- RS Stock No.:
- 218-2999
- Mfr. Part No.:
- IPA60R160P6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS P6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 176W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series 600V CoolMOS P6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 176W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ N-channel power MOSFET. The CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. The extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Related links
- Infineon 600V CoolMOS P6 Type N-Channel MOSFET 600 V N, 3-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R160P6XKSA1
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- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB60R160P6ATMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-220
