Infineon CoolMOS™ P6 N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK IPB60R160P6ATMA1

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£5.26

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Packaging Options:
RS Stock No.:
130-0894
Mfr. Part No.:
IPB60R160P6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

23.8 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P6

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

176 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.57mm

Minimum Operating Temperature

-55 °C

Height

9.45mm

Forward Diode Voltage

0.9V

Infineon CoolMOS™E6/P6 series Power MOSFET


The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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