- RS Stock No.:
- 214-9076
- Mfr. Part No.:
- IPL60R210P6AUMA1
- Brand:
- Infineon
11995 In stock - FREE next working day delivery available
Price Each (In a Pack of 5)
£2.882
(exc. VAT)
£3.458
(inc. VAT)
Units | Per unit | Per Pack* |
---|---|---|
5 - 20 | £2.882 | £14.41 |
25 - 45 | £2.508 | £12.54 |
50 - 120 | £2.364 | £11.82 |
125 - 245 | £2.19 | £10.95 |
250 + | £2.018 | £10.09 |
*price indicative
- RS Stock No.:
- 214-9076
- Mfr. Part No.:
- IPL60R210P6AUMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
600V CoolMOSP6 Power Transistor
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Summary of Features
Reduced gate charge (Q g)
Higher V th
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology
Higher V th
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology
Benefits
- Improved effciency especially in light load condition
- Better efficiency in soft switching applications due to earlier turn-off
- Suitable for hard- & soft-switching topologies
- Optimized balance of efficiency and ease of use and good controllability of switching behavior
- High robustness and better efficiency
- Outstanding quality & reliability
Potential Applications
- PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
- PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 19.2 A |
Maximum Drain Source Voltage | 600 V |
Series | CoolMOS™ P6 |
Package Type | ThinkPAK 8 x 8 |
Mounting Type | Surface Mount |
Pin Count | 5 |
Maximum Drain Source Resistance | 0.21 O |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
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