Infineon OptiMOS™ -T2 N-Channel MOSFET, 25 A, 60 V, 3-Pin DPAK IPD25N06S4L30ATMA2

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Subtotal (1 pack of 20 units)*

£8.52

(exc. VAT)

£10.22

(inc. VAT)

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20 +£0.426£8.52

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Packaging Options:
RS Stock No.:
215-2504
Mfr. Part No.:
IPD25N06S4L30ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon OptiMOS®-T2 Power-Transistor has 60V maximum drain source voltage, N-Ch, Automotive MOSFET, with DPAK(TO-252) package type.

N-channel - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested

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