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Infineon OptiMOS Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN BSZ146N10LS5ATMA1

RS Stock No.:: 215-2473
Mfr. Part No.:: BSZ146N10LS5ATMA1
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN BSZ146N10LS5ATMA1

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Subtotal (1 pack of 20 units)*

£15.68

(exc. VAT)

£18.82

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,400 unit(s) ready to ship

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Units	Per unit	Per Pack*
20 - 20	£0.784	£15.68
40 - 80	£0.745	£14.90
100 - 180	£0.714	£14.28
200 - 480	£0.682	£13.64
500 +	£0.635	£12.70

*price indicative

RS Stock No.:: 215-2473
Mfr. Part No.:: BSZ146N10LS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PQFN
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	14.6mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	52W
	Typical Gate Charge Qg @ Vgs	8nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 100V
	Package Type PQFN
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 14.6mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 52W
	Typical Gate Charge Qg @ Vgs 8nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSZ146N10LS5ATMA1

The Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(the)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Low R DS(on) in small package

Low gate charge

Lower output charge

Logic level compatibility