Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1
- RS Stock No.:
- 214-8967
- Mfr. Part No.:
- BSB104N08NP3GXUSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
£13.26
(exc. VAT)
£15.915
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 4,995 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | £0.884 | £13.26 |
| 75 - 135 | £0.84 | £12.60 |
| 150 - 360 | £0.805 | £12.08 |
| 375 - 735 | £0.769 | £11.54 |
| 750 + | £0.716 | £10.74 |
*price indicative
- RS Stock No.:
- 214-8967
- Mfr. Part No.:
- BSB104N08NP3GXUSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | MG-WDSON | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 10.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.05mm | |
| Height | 0.7mm | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type MG-WDSON | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 10.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.05mm | ||
Height 0.7mm | ||
Width 6.35 mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.
Low parasitic inductance
Optimized technology for DC/DC converters
Dual sided cooling
Related links
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 7-Pin MG-WDSON-2 BSB104N08NP3GXUSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 7-Pin MG-WDSON-2 BSB028N06NN3GXUMA1
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 6-Pin MG-WDSON-2 BSF450NE7NH3XUMA1
- Infineon HEXFET N-Channel MOSFET 80 V, 7-Pin DirectFET ISOMETRIC IRF6668TRPBF
- onsemi PowerTrench N-Channel MOSFET 80 V, 7-Pin D2PAK FDB024N08BL7
- Vishay Silicon P-Channel MOSFET 80 V, 7-Pin SO-8L SIJ4819DP-T1-GE3
- Infineon HEXFET N-Channel MOSFET 80 V MG-WDSON-5 IRF6646TRPBF
- Infineon HEXFET MOSFET 25 V MG-WDSON-5 IRF6717MTRPBF