Infineon OptiMOS™ N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 BSB104N08NP3GXUSA1

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Subtotal (1 pack of 15 units)*

£13.26

(exc. VAT)

£15.915

(inc. VAT)

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15 - 60£0.884£13.26
75 - 135£0.84£12.60
150 - 360£0.805£12.08
375 - 735£0.769£11.54
750 +£0.716£10.74

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Packaging Options:
RS Stock No.:
214-8967
Mfr. Part No.:
BSB104N08NP3GXUSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™

Package Type

MG-WDSON-2

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0104 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.

Low parasitic inductance
Optimized technology for DC/DC converters
Dual sided cooling

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