onsemi NTP Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTP082N65S3HF
- RS Stock No.:
- 214-8911
- Mfr. Part No.:
- NTP082N65S3HF
- Brand:
- onsemi
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
£7.30
(exc. VAT)
£8.76
(inc. VAT)
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In Stock
- Plus 762 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £3.65 | £7.30 |
| 20 + | £3.145 | £6.29 |
*price indicative
- RS Stock No.:
- 214-8911
- Mfr. Part No.:
- NTP082N65S3HF
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | NTP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 313W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Length | 10.53mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series NTP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 313W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Length 10.53mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET is brand−new high voltage super−junction MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Pb−Free
RoHS compliant
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