Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Summary of Features

•Combination of low R DS(on) and wide safe operating area (SOA)

•High max. pulse current

•High continuous pulse current

Benefits

•Rugged linear mode operation

•Low conduction losses

•Higher in-rush current enabled for faster start-up and shorter down time

Potential Applications

•Telecom

•Battery management

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	180 A
	Maximum Drain Source Voltage	100 V
	Package Type	D2PAK-7
	Series	OptiMOS™
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	0.0017 Ω
	Maximum Gate Threshold Voltage	4.1V
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 180 A
	Maximum Drain Source Voltage 100 V
	Package Type D2PAK-7
	Series OptiMOS™
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 0.0017 Ω
	Maximum Gate Threshold Voltage 4.1V
	Number of Elements per Chip 1

Infineon OptiMOS™ N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB017N10N5LFATMA1

FREE delivery for orders over £50.00

Combining a low RDS(on) with a wide safe operating area (SOA)

Summary of Features

Benefits

Potential Applications

Related links

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