Infineon OptiMOS™ N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB017N10N5LFATMA1

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£9.81

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£11.772

(inc. VAT)

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Packaging Options:
RS Stock No.:
214-4364
Mfr. Part No.:
IPB017N10N5LFATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK-7

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0017 Ω

Maximum Gate Threshold Voltage

4.1V

Number of Elements per Chip

1

Combining a low RDS(on) with a wide safe operating area (SOA)


OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Summary of Features


•Combination of low R DS(on) and wide safe operating area (SOA)

•High max. pulse current

•High continuous pulse current

Benefits


•Rugged linear mode operation

•Low conduction losses

•Higher in-rush current enabled for faster start-up and shorter down time

Potential Applications


•Telecom

•Battery management

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