Infineon OptiMOS™ N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB017N10N5LFATMA1
- RS Stock No.:
- 214-4364
- Mfr. Part No.:
- IPB017N10N5LFATMA1
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£9.81
(exc. VAT)
£11.772
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,662 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | £4.905 | £9.81 |
*price indicative
- RS Stock No.:
- 214-4364
- Mfr. Part No.:
- IPB017N10N5LFATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK-7 | |
| Series | OptiMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.0017 Ω | |
| Maximum Gate Threshold Voltage | 4.1V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK-7 | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.0017 Ω | ||
Maximum Gate Threshold Voltage 4.1V | ||
Number of Elements per Chip 1 | ||
Combining a low RDS(on) with a wide safe operating area (SOA)
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Summary of Features
•Combination of low R DS(on) and wide safe operating area (SOA)
•High max. pulse current
•High continuous pulse current
•High max. pulse current
•High continuous pulse current
Benefits
•Rugged linear mode operation
•Low conduction losses
•Higher in-rush current enabled for faster start-up and shorter down time
•Low conduction losses
•Higher in-rush current enabled for faster start-up and shorter down time
Potential Applications
•Telecom
•Battery management
•Battery management
Related links
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