Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB024N10N5ATMA1

Subtotal (1 reel of 1000 units)*

£1,352.00

(exc. VAT)

£1,622.00

(inc. VAT)

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Per Reel*
1000 +£1.352£1,352.00

*price indicative

RS Stock No.:
214-9008
Mfr. Part No.:
IPB024N10N5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0024 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

100% avalanche tested
Qualified according to JEDEC for target applications

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