onsemi NTH SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 NTH4L160N120SC1

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Subtotal (1 pack of 2 units)*

£5.79

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£6.948

(inc. VAT)

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Packaging Options:
RS Stock No.:
202-5703
Mfr. Part No.:
NTH4L160N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17.3 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.224 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

160mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant

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