onsemi NTH Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin TO-247 NTHL040N120SC1

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Subtotal (1 pack of 2 units)*

£25.24

(exc. VAT)

£30.28

(inc. VAT)

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2 - 18£12.62£25.24
20 - 198£10.875£21.75
200 +£9.43£18.86

*price indicative

Packaging Options:
RS Stock No.:
202-5705
Mfr. Part No.:
NTHL040N120SC1
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Series

NTH

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

106nC

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

348W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

20.25mm

Standards/Approvals

No

Height

15.87mm

Width

4.82 mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

40mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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