Dual N-Channel MOSFET, 25 A, 80 V, 8-Pin DFN onsemi NVMFD6H852NLWFT1GOS

RS Stock No.:: 195-2556
Mfr. Part No.:: NVMFD6H852NLWFT1G
Brand:: onsemi

Dual N-Channel MOSFET, 25 A, 80 V, 8-Pin DFN onsemi NVMFD6H852NLWFT1GOS

Available to back order for despatch 14/05/2024

Price Each (In a Pack of 30)

£0.869

(exc. VAT)

£1.043

(inc. VAT)

Units	Per unit	Per Pack*
30 - 270	£0.869	£26.07
300 - 720	£0.847	£25.41
750 +	£0.825	£24.75
*price indicative

RS Stock No.:: 195-2556
Mfr. Part No.:: NVMFD6H852NLWFT1G
Brand:: onsemi

Datasheet NVMFD6H852NLWFT1G

RS Stock No.:: 195-2556
Mfr. Part No.:: NVMFD6H852NLWFT1G
Brand:: onsemi

Datasheet NVMFD6H852NLWFT1G

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	25 A
Maximum Drain Source Voltage	80 V
Package Type	DFN
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	31.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3.2 W
Transistor Configuration	Dual
Maximum Gate Source Voltage	±20 V
Length	6.1mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	10 nC @ 10 V
Number of Elements per Chip	2
Width	5.1mm
Minimum Operating Temperature	-55 °C
Automotive Standard	AEC-Q101
Height	1.05mm
Forward Diode Voltage	1.2V

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	25 A
Maximum Drain Source Voltage	80 V
Package Type	DFN
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	31.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3.2 W
Transistor Configuration	Dual
Maximum Gate Source Voltage	±20 V
Length	6.1mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	10 nC @ 10 V
Number of Elements per Chip	2
Width	5.1mm
Minimum Operating Temperature	-55 °C
Automotive Standard	AEC-Q101
Height	1.05mm
Forward Diode Voltage	1.2V

Dual N-Channel MOSFET, 25 A, 80 V, 8-Pin DFN onsemi NVMFD6H852NLWFT1GOS

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