onsemi Dual N-Channel MOSFET, 29 A, 40 V, 8-Pin DFN NVMFD5C478NLT1G
- RS Stock No.:
- 178-4470
- Mfr. Part No.:
- NVMFD5C478NLT1G
- Brand:
- onsemi
Save 25% when you buy 250 units
Subtotal (1 pack of 10 units)*
£8.73
(exc. VAT)
£10.48
(inc. VAT)
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- Final 1,500 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.873 | £8.73 |
| 100 - 240 | £0.753 | £7.53 |
| 250 + | £0.653 | £6.53 |
*price indicative
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- RS Stock No.:
- 178-4470
- Mfr. Part No.:
- NVMFD5C478NLT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 29 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 14.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 23 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 8.1 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 5.1mm | |
| Width | 6.1mm | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 14.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 23 W | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 8.1 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 5.1mm | ||
Width 6.1mm | ||
Height 1.05mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C478NLWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Safeguard against voltage overstress failures
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
Low on resistance
High current capability
PPAP capable
NVMFD5C478NLWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Safeguard against voltage overstress failures
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
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