onsemi Dual N-Channel MOSFET, 68 A, 60 V, 8-Pin DFN NVMFD5C668NLT1G
- RS Stock No.:
- 178-4301
- Mfr. Part No.:
- NVMFD5C668NLT1G
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 178-4301
- Mfr. Part No.:
- NVMFD5C668NLT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 68 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 6.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 57.5 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 9.8 nC @ 4.5 V | |
| Length | 5.1mm | |
| Width | 6.1mm | |
| Number of Elements per Chip | 2 | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 68 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 57.5 W | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 9.8 nC @ 4.5 V | ||
Length 5.1mm | ||
Width 6.1mm | ||
Number of Elements per Chip 2 | ||
Height 1.05mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
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