onsemi N-Channel MOSFET, 27 A, 60 V, 4-Pin LFPAK, SOT-669 NVMYS021N06CLTWG

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£10.30

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£12.35

(inc. VAT)

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Packaging Options:
RS Stock No.:
195-2550
Mfr. Part No.:
NVMYS021N06CLTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

31.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.25mm

Length

5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Height

1.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free

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