N-Channel MOSFET, 200 A, 40 V, 8-Pin LFPAK8 onsemi NTMJS1D5N04CLTWG
- RS Stock No.:
- 195-2505
- Mfr. Part No.:
- NTMJS1D5N04CLTWG
- Brand:
- onsemi
Available to back order for despatch 09/09/2024
Price Each (In a Pack of 20)
£3.03
(exc. VAT)
£3.64
(inc. VAT)
| Units | Per unit | Per Pack* |
| 20 - 80 | £3.03 | £60.60 |
| 100 - 480 | £2.951 | £59.02 |
| 500 - 980 | £2.873 | £57.46 |
| 1000 - 1480 | £2.797 | £55.94 |
| 1500 + | £2.724 | £54.48 |
| *price indicative | ||
- RS Stock No.:
- 195-2505
- Mfr. Part No.:
- NTMJS1D5N04CLTWG
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
These Devices are Pb−Free
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | LFPAK8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 110 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 4.9mm |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Length | 5mm |
| Forward Diode Voltage | 1.2V |
| Height | 1.15mm |
| Minimum Operating Temperature | -55 °C |
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