onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK8 NVMJS1D3N04CTWG

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Subtotal (1 pack of 4 units)*

£5.96

(exc. VAT)

£7.16

(inc. VAT)

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Units
Per unit
Per Pack*
4 - 36£1.49£5.96
40 - 396£1.285£5.14
400 - 1996£1.115£4.46
2000 +£0.98£3.92

*price indicative

Packaging Options:
RS Stock No.:
185-9186
Mfr. Part No.:
NVMJS1D3N04CTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

235 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

65 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

4.9mm

Length

5mm

Height

1.2mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Non Compliant

COO (Country of Origin):
PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free

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