onsemi N-Channel MOSFET, 200 A, 40 V, 8-Pin LFPAK8 NVMJS1D5N04CLTWG

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Subtotal (1 pack of 20 units)*

£9.10

(exc. VAT)

£10.92

(inc. VAT)

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20 +£0.455£9.10

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Packaging Options:
RS Stock No.:
195-2509
Mfr. Part No.:
NVMJS1D5N04CLTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.9mm

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

70 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.15mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Automotive Power MOSFET in a 5x6mm flat lead, dual cool package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free

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