STMicroelectronics N-Channel MOSFET Transistor, 13 A, 3-Pin D2PAK STB18N60M6

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Subtotal (1 pack of 5 units)*

£11.69

(exc. VAT)

£14.03

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20£2.338£11.69
25 - 45£2.222£11.11
50 - 120£1.998£9.99
125 - 245£1.798£8.99
250 +£1.712£8.56

*price indicative

Packaging Options:
RS Stock No.:
192-4936
Mfr. Part No.:
STB18N60M6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

13 A

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

16.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10.4mm

Number of Elements per Chip

1

Width

9.35mm

Forward Diode Voltage

1.6V

Minimum Operating Temperature

-55 °C

Height

4.37mm

COO (Country of Origin):
CN
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance

Zener-protected

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