STMicroelectronics N-Channel MOSFET Transistor, 13 A, 3-Pin D2PAK STB18N60M6

Subtotal (1 reel of 1000 units)*

£1,102.00

(exc. VAT)

£1,322.00

(inc. VAT)

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Per Reel*
1000 +£1.102£1,102.00

*price indicative

RS Stock No.:
192-4649
Mfr. Part No.:
STB18N60M6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

13 A

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

9.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

16.8 nC @ 10 V

Length

10.4mm

Height

4.37mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

COO (Country of Origin):
CN
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance

Zener-protected

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