Infineon CoolMOS™ C7 N-Channel MOSFET, 13 A, 600 V, 3-Pin D2PAK IPB60R180C7ATMA1
- RS Stock No.:
 - 215-2498
 - Mfr. Part No.:
 - IPB60R180C7ATMA1
 - Brand:
 - Infineon
 
Subtotal (1 pack of 5 units)*
£7.00
(exc. VAT)
£8.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 785 unit(s) ready to ship
 
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units  | Per unit  | Per Pack*  | 
|---|---|---|
| 5 + | £1.40 | £7.00 | 
*price indicative
- RS Stock No.:
 - 215-2498
 - Mfr. Part No.:
 - IPB60R180C7ATMA1
 - Brand:
 - Infineon
 
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK (TO-263) | |
| Series | CoolMOS™ C7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.18 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 13 A  | ||
Maximum Drain Source Voltage 600 V  | ||
Package Type D2PAK (TO-263)  | ||
Series CoolMOS™ C7  | ||
Mounting Type Surface Mount  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 0.18 Ω  | ||
Channel Mode Enhancement  | ||
Maximum Gate Threshold Voltage 4V  | ||
Transistor Material Si  | ||
Number of Elements per Chip 1  | ||
The Infineon 600V Cool MOS™ C7 super junction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the Cool MOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by Cool MOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V Cool MOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Related links
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R180C7ATMA1
 - Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R180C7XKSA1
 - Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R180C7ATMA1
 - Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R180C7XKSA1
 - Infineon CoolMOS™ C7 N-Channel MOSFET 700 V, 3-Pin TO-220 IPP65R190C7FKSA1
 - Infineon CoolMOS™ C7 N-Channel MOSFET 700 V, 3-Pin TO-247 IPW65R190C7XKSA1
 - ROHM N-Channel MOSFET 600 V, 3-Pin DPAK R6013VND3TL1
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