N-Channel MOSFET, 13 A, 600 V, 3-Pin D2PAK Infineon IPB60R180C7ATMA1
- RS Stock No.:
- 215-2498
- Mfr. Part No.:
- IPB60R180C7ATMA1
- Brand:
- Infineon
785 In stock - FREE next working day delivery available
Price Each (In a Pack of 5)
£2.15
(exc. VAT)
£2.58
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.15 | £10.75 |
| 50 - 120 | £2.042 | £10.21 |
| 125 - 245 | £2.00 | £10.00 |
| 250 - 495 | £1.85 | £9.25 |
| 500 + | £1.72 | £8.60 |
*price indicative
- RS Stock No.:
- 215-2498
- Mfr. Part No.:
- IPB60R180C7ATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon 600V Cool MOS™ C7 super junction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the Cool MOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by Cool MOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V Cool MOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 13 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | D2PAK (TO-263) |
| Series | CoolMOS™ C7 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.18 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
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