STMicroelectronics N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STP26N60DM6

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

£7.77

(exc. VAT)

£9.324

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 66 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8£3.885£7.77
10 - 18£3.655£7.31
20 - 48£3.46£6.92
50 - 98£3.27£6.54
100 +£3.115£6.23

*price indicative

Packaging Options:
RS Stock No.:
192-4925
Mfr. Part No.:
STP26N60DM6
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

24 nC @ 10 V

Width

4.6mm

Length

10.4mm

Number of Elements per Chip

1

Height

15.75mm

Forward Diode Voltage

1.6V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness
Zener-protected

Related links