STMicroelectronics N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STP26N60DM6
- RS Stock No.:
- 192-4925
- Mfr. Part No.:
- STP26N60DM6
- Brand:
- STMicroelectronics
Subtotal (1 pack of 2 units)*
£7.77
(exc. VAT)
£9.324
(inc. VAT)
FREE delivery for orders over £50.00
- 66 unit(s) ready to ship
| Units | Per unit | Per Pack* | 
|---|---|---|
| 2 - 8 | £3.885 | £7.77 | 
| 10 - 18 | £3.655 | £7.31 | 
| 20 - 48 | £3.46 | £6.92 | 
| 50 - 98 | £3.27 | £6.54 | 
| 100 + | £3.115 | £6.23 | 
*price indicative
- RS Stock No.:
- 192-4925
- Mfr. Part No.:
- STP26N60DM6
- Brand:
- STMicroelectronics
| Select all | Attribute | Value | 
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15 A | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 195 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.75V | |
| Minimum Gate Threshold Voltage | 3.25V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V | |
| Width | 4.6mm | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Height | 15.75mm | |
| Forward Diode Voltage | 1.6V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
| Brand STMicroelectronics | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 15 A | ||
| Package Type TO-220 | ||
| Mounting Type Through Hole | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 195 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 4.75V | ||
| Minimum Gate Threshold Voltage 3.25V | ||
| Maximum Power Dissipation 110 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage ±25 V | ||
| Maximum Operating Temperature +150 °C | ||
| Typical Gate Charge @ Vgs 24 nC @ 10 V | ||
| Width 4.6mm | ||
| Length 10.4mm | ||
| Number of Elements per Chip 1 | ||
| Height 15.75mm | ||
| Forward Diode Voltage 1.6V | ||
| Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
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