STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4

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Subtotal (1 reel of 1000 units)*

£1,710.00

(exc. VAT)

£2,050.00

(inc. VAT)

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Per Reel*
1000 +£1.71£1,710.00

*price indicative

RS Stock No.:
188-8281
Mfr. Part No.:
STB12NM50T4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

9.35mm

Height

4.37mm

Forward Diode Voltage

1.5V

Minimum Operating Temperature

-65 °C

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance.

High dv/dt and avalanche capabilities
Low input capacitance and gate charge
Tight process control and high manufacturing yields
Low gate input resistance
Applications
Switching application

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