STMicroelectronics STP12NM50 Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-263 STB12NM50T4

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Subtotal (1 pack of 5 units)*

£22.10

(exc. VAT)

£26.50

(inc. VAT)

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5 +£4.42£22.10

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Packaging Options:
RS Stock No.:
188-8473
Mfr. Part No.:
STB12NM50T4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

500V

Series

STP12NM50

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-65°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

160W

Maximum Operating Temperature

150°C

Width

9.35 mm

Height

4.37mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance.

High dv/dt and avalanche capabilities

Low input capacitance and gate charge

Tight process control and high manufacturing yields

Low gate input resistance

Applications

Switching application

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