Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-220 SIHA22N60EF-GE3

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Subtotal 25 units (supplied in a tube)*

£70.50

(exc. VAT)

£84.50

(inc. VAT)

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Units
Per unit
25 - 45£2.82
50 - 120£2.662
125 - 245£2.504
250 +£2.35

*price indicative

Packaging Options:
RS Stock No.:
188-4973P
Mfr. Part No.:
SIHA22N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

182 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

10.3mm

Width

4.7mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

48 nC @ 10 V

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

15.3mm

COO (Country of Origin):
CN
EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)

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