Vishay P-Channel MOSFET, 195 A, 30 V, 8-Pin PowerPAK SO-8 SIRA99DP-T1-GE3

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
188-4884
Mfr. Part No.:
SIRA99DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +16 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

172.5 nC @ 10 V

Length

5.99mm

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

1.1V

P-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV p-channel power MOSFET
Very low RDS(on) minimizes voltage drop and reduces conduction loss
Eliminates the need for charge pump

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