Vishay TrenchFET P-Channel MOSFET, 14.9 A, 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3

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RS Stock No.:
180-7295
Mfr. Part No.:
SI4825DDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

14.9 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0205 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has drain-source resistance of 12.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 14.9A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Load Switch
• Notebook Adaptor Switch

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

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